InGaAs Avalanche Photodiode Module

InGaAs APD 1) High responsibility 2) Wide bandwidth 3) The gain is up to 20 4) Coaxial pigtailed package

InGaAs avalanche photodiode module

Features:

1) High responsibility

2) Wide bandwidth 

3) The gain is up to 20

4) Coaxial pigtailed package

Application:

1) Analogue optical receiver with feeble signal

2) OTDR

Technical parameter(TC=25 ºC)

Parameter	Symbol	Test condition	Min.	Typ.	Max.	Unit
Spectrum response	λ	-	1100	-	1650	nm
Diameter of photo surface	Φ	-	-	50	-	μm
Puncture voltage	VBR	Id=100μA	30	45	60	V
Temperature coefficient of puncture voltage	δ	Tc=25~85 ºC	-	0.1	0.15	V/ ºC
Responsibility	R	λ=1310nm M=1	0.8	0.85	-	A/W
		λ=1550nm M=1	0.9	0.95	-
Dark current	Id	Φe=0 M=10	-	1	10	nA
Capacity	Ct	M=10 f=1MHz	-	0.4	1.0	Pf
-3dB bandwidth	Fc	λ=1550nm M=10	2	3	-	GHz
Optical return loss	ORL	λ=1550nm SM	30	-	-	dB
Operating voltage	VR	λ=1550nm M=10	0.9~0.95VBR			V

Absolute limited rating:

1.  Forward current: 10mA

2.  Reverse current: 3 mA

3.  Operating temperature: -40~+85 ºC

4.  Storage temperature: -40~+85 ºC

5.  Solder condition: 260 ºC /10S

InGaAs Avalanche Photodiode Module